CS19N40A8R Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R CS19N40 A8R General .
VDSS 400 V CS19N40 A8R, the silicon N-channel Enhanced ID 19 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 150.

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Datasheet Specifications

Part number: CS19N40A8R
Manufacturer: CR Micro
File Size: 392.28 KB
Datasheet: CS19N40A8R-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of electron ballast and adaptor. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source

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📁 Related Datasheet

CS19N40A8H CS19N40AN CS19 CS19-08HO1 CS19-08ho1S CS19-12HO1

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CS19N40A8R Silicon N-Channel Power MOSFET CR Micro

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