CS19N40FA9R - Silicon N-Channel Power MOSFET
VDSS 400 V CS19N40F A9R, the silicon N-channel Enhanced ID 19 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 33 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.23 Ω performance and enhance the avalanche energy.
The transistor can be used
CS19N40FA9R Features
* l Fast Switching l Low ON Resistance(Rdson≤0.30Ω) l Low Gate Charge (Typical Data:42nC) l Low Reverse transfer capacitances(Typical:12.3pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（TJ= 25℃ unless otherwise specified）：
