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CS19N40FA9R Datasheet - CR Micro

CS19N40FA9R Silicon N-Channel Power MOSFET

VDSS 400 V CS19N40F A9R, the silicon N-channel Enhanced ID 19 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 33 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.23 Ω performance and enhance the avalanche energy. The transistor can be used.

CS19N40FA9R Features

* l Fast Switching l Low ON Resistance(Rdson≤0.30Ω) l Low Gate Charge (Typical Data:42nC) l Low Reverse transfer capacitances(Typical:12.3pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（TJ= 25℃ unless otherwise specified）：

CS19N40FA9R-CRMicro.pdf

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Datasheet Details

Part number:

CS19N40FA9R

Manufacturer:

CR Micro

File Size:

392.66 KB

Description:

Silicon n-channel power mosfet.

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CS19N40FA9R CS19N40FA9R Silicon N-Channel Power MOSFET CR Micro

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