CS19N10A0 - Silicon N-Channel Power MOSFET
CS19N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy.
This device is suitable for use as a load switch and PWM applications.
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CS19N10A0 Features
* l Fast Switching l Low ON Resistance(Rdson≤67 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test 100 V 19 A 56.8 W 53 mΩ Applications： Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VD
