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CS19N10A0 Datasheet - CR Micro

Silicon N-Channel Power MOSFET

CS19N10A0 Features

* l Fast Switching l Low ON Resistance(Rdson≤67 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test 100 V 19 A 56.8 W 53 mΩ Applications： Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VD

CS19N10A0 General Description

CS19N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. T.

CS19N10A0 Datasheet (678.24 KB)

Preview of CS19N10A0 PDF

Datasheet Details

Part number:

CS19N10A0

Manufacturer:

CR Micro

File Size:

678.24 KB

Description:

Silicon n-channel power mosfet.

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CS19N10A0 Silicon N-Channel Power MOSFET CR Micro

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