Datasheet4U Logo Datasheet4U.com

CS19N10A0 Datasheet - CR Micro

CS19N10A0 Silicon N-Channel Power MOSFET

CS19N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. T.

CS19N10A0 Features

* l Fast Switching l Low ON Resistance(Rdson≤67 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test 100 V 19 A 56.8 W 53 mΩ Applications： Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VD

CS19N10A0-CRMicro.pdf

Preview of CS19N10A0 PDF
CS19N10A0 Datasheet Preview Page 2 CS19N10A0 Datasheet Preview Page 3

Datasheet Details

Part number:

CS19N10A0

Manufacturer:

CR Micro

File Size:

678.24 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

CS19N10A8 Silicon N-Channel Power MOSFET (CR Micro)

CS19N40A8H Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS19N40A8R Silicon N-Channel Power MOSFET (CR Micro)

CS19N40AN Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS19N40ANR Silicon N-Channel Power MOSFET (CR Micro)

CS19N40FA9R Silicon N-Channel Power MOSFET (CR Micro)

CS19 Phase Control Thyristors (IXYS Corporation)

CS19-08HO1 Phase Control Thyristors (IXYS Corporation)

TAGS

CS19N10A0 CS19N10A0 Silicon N-Channel Power MOSFET CR Micro

CS19N10A0 Distributor