* / Advantages:
* Planar passivated chips
* Low leakage current
* Very short recovery time
* Improved thermal behaviour
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* High reliability circuit operation
DSEI120-12A Datasheet (205.64 KB)
DSEI120-12A
IXYS Corporation
205.64 KB
Fast recovery epitaxial diode.
Fast Recovery Epitaxial Diode (FRED) DSEI 120-12A IFAV = 109 A VRRM = 1200 V trr = 40 ns Part number DSEI 120-12A TO-247AD 3 1/4 4 (TAB) Featur.
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