Datasheet Specifications
- Part number
- IXFA3N120
- Manufacturer
- IXYS Corporation
- File Size
- 591.56 KB
- Datasheet
- IXFA3N120_IXYSCorporation.pdf
- Description
- HiPerFET Power MOSFETs
Description
www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR V.
Features
* z 1.13/10 Nm/lb. in. 4 2 g g z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 5.0 ±100 TJ = 25°C TJ = 125°C 50 2 4.5 V V nA µA mA Ω z Low gate charge and capacitances - easier to drive - faster switching International standard pIXFA3N120 Distributors
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