* z 1.13/10 Nm/lb.in. 4 2 g g z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 5.0 ±100 TJ = 25°C TJ = 125°C 50 2 4.5 V V nA µA mA Ω z Low gate charge and capacitances - easier to drive - faster switching International standard p
IXFA3N120 Datasheet (591.56 KB)
IXFA3N120
IXYS Corporation
591.56 KB
Hiperfet power mosfets.
www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR V.
📁 Related Datasheet
IXFA3N80 Power MOSFET (IXYS Corporation)
IXFA30N60X Power MOSFET (IXYS)
IXFA30N60X N-Channel MOSFET (INCHANGE)
IXFA34N65X2 Power MOSFET (IXYS)
IXFA34N65X2 N-Channel MOSFET (INCHANGE)
IXFA36N20X3 Power MOSFET (IXYS)
IXFA36N20X3 N-Channel MOSFET (INCHANGE)
IXFA102N15T Power MOSFET (IXYS Corporation)
IXFA102N15T N-Channel MOSFET (INCHANGE)
IXFA10N60P Polar MOSFET (IXYS Corporation)
