* l l l 1.13/10 Nm/lb.in. 4 2 g g International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ± 100 TJ = 25°C TJ = 125°C 50 1 3.6 V V nA mA mA W Adv
IXFA3N80 Datasheet (122.55 KB)
IXFA3N80
IXYS Corporation
122.55 KB
Power mosfet.
www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet IXFA 3N80 IXFP 3N.
📁 Related Datasheet
IXFA3N120 HiPerFET Power MOSFETs (IXYS Corporation)
IXFA30N60X Power MOSFET (IXYS)
IXFA30N60X N-Channel MOSFET (INCHANGE)
IXFA34N65X2 Power MOSFET (IXYS)
IXFA34N65X2 N-Channel MOSFET (INCHANGE)
IXFA36N20X3 Power MOSFET (IXYS)
IXFA36N20X3 N-Channel MOSFET (INCHANGE)
IXFA102N15T Power MOSFET (IXYS Corporation)
IXFA102N15T N-Channel MOSFET (INCHANGE)
IXFA10N60P Polar MOSFET (IXYS Corporation)
