IXFA3N80 Datasheet - IXYS Corporation

IXFA3N80 - Power MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet IXFA 3N80 IXFP 3N80 VDSS = 800 V ID25 = 3.6 A RDS(on) = 3.6 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C.

IXFA3N80 Features

* l l l 1.13/10 Nm/lb.in. 4 2 g g International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ± 100 TJ = 25°C TJ = 125°C 50 1 3.6 V V nA mA mA W Adv

IXFA3N80_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFA3N80

Manufacturer:

IXYS Corporation

File Size:

122.55 KB

Description:

Power mosfet.

IXFA3N80 Distributor

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IXFA3N80 Power MOSFET IXYS Corporation