IXFA3N80 - Power MOSFET

IXYS Corporation

Datasheet Details

l l l 1.13/10 Nm/lb. in. 4 2 g g International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ± 100 TJ = 25°C TJ = 125°C 50 1 3.6 V V nA mA mA W Advantages l l l Easy to mount Space savings High power density VDSS VGS(th) I GSS I DSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 1 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID =.

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Published: Nov 27, 2006 |