IXFA36N20X3, IXFY36N20X3 Datasheet - IXYS

IXFA36N20X3 - Power MOSFET

X3-Class HiPERFETTM Power MOSFET N-Channel Enhancement Mode IXFY36N20X3 IXFA36N20X3 IXFP36N20X3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 200 V 200 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 36 50 18 300 20 170 -55 +150 150 -55 +150 A A A mJ V/ns W C C .

IXFA36N20X3 Features

* International Standard Packages

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* PFC Circuits

IXFY36N20X3-IXYS.pdf