IXFA34N65X3 Datasheet (IXYS) - N-Channel Enhancement Mode Power MOSFET

IXFA34N65X3, N-Channel Enhancement Mode Power MOSFET

X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA34N65X3 D G S Symbol VDSS V DGR V GSS VGSM ID25 IDM I A E AS dv/dt P D TJ T JM Tstg T SOLD F C Weight Test Conditions TJ = 25C to 150C T J = 25C to 150C, R GS = 1M Continuous Transient Maximum Ratings 650 V 650 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM T C = 25C T C = 25C IS  IDM, VDD  VDSS, TJ  150°C T C = 25C 34 48 5 750 50 446 -55 +150 150 -55 +150

IXFA34N65X3 Features

* International Standard Package

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* PFC Circuits