IXFB50N80Q2 Datasheet - IXYS Corporation

IXFB50N80Q2 HiPerFET Power MOSFETs Q-Class

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C IXFB50N80Q2 VDSS ID25 RDS(on) trr = = ≤ ≤.

IXFB50N80Q2 Features

* Double Metal Process for Low Gate Resistance Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Easy to Mount Space Savings High Power Density Applications Switch-Mode and Resonant-Mode Power Supplies >500kHz Switching DC-DC Converters DC Choppers Pulse Generation Laser Drive

IXFB50N80Q2_IXYSCorporation.pdf