IXFB52N90P Datasheet - IXYS Corporation

IXFB52N90P Polar Power MOSFET HiPerFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB52N90P VDSS ID25 RDS(on) trr = = ≤ ≤ 900V 52A 160mΩ 300ns PLUS264TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ V.

IXFB52N90P Features

* z z z G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Fast Intrinsic Diode Avalanche Rated Low Package Inductance Advantages z z z Plus 264TM Package for Clip or Spring Mounting Space Savings High Power Density Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(

IXFB52N90P_IXYSCorporation.pdf