IXFB52N90P Polar Power MOSFET HiPerFET

IXYS Corporation

Description

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB52N90P VDSS ID25 RDS(on) trr = = ≤ ≤ 900V 52A.

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Datasheet Specifications

Part number: IXFB52N90P
Manufacturer: IXYS Corporation
File Size: 139.44 KB
Datasheet: IXFB52N90P_IXYSCorporation.pdf
Description: Polar Power MOSFET HiPerFET

Features

* z z z G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Fast Intrinsic Diode Avalanche Rated Low Package Inductance Advantages z z z Plus 264TM Package for Clip or Spring Mounting Space Savings High Power Density Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(

Applications

* z z z z ± 200 nA 50 μ A 4 mA 160 m Ω z Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor drives Robotics and Servo Controls VGS = 10V, ID = 0.5
* ID25, Note 1 © 2009 IXYS CORPORATION, All Rights Reserved DS100064A(02/09) www. DataSheet. in I

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IXFB52N90P Polar Power MOSFET HiPerFET IXYS Corporation

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