IXFB82N60Q3 Datasheet (IXYS Corporation)

IXFB82N60Q3, Power MOSFET

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFB82N60Q3 D G S VDSS = ID25 =  RDS(on) trr  600V 82A 75m 300ns PLUS264TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 V 600 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25

IXFB82N60Q3 Features

* Low Intrinsic Gate Resistance

* Low Package Inductance

* Fast Intrinsic Rectifier

* Low R and Q DS(on) G Advantages

* High Power Density

* Easy to Mount

* Space Savings Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA V