IXFB80N50Q2 Datasheet - IXYS Corporation

IXFB80N50Q2, Power MOSFET

www.DataSheet4U.com Advance Technical Information HiPerFET TM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsi.

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IXFB80N50Q2_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFB80N50Q2

Manufacturer:

IXYS Corporation

File Size:

196.02 KB

Description:

Power MOSFET

Features

* Double metal process for low gate resistance
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic rectifier

Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 3.0 V DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching
* DC choppers
* Pulse generation
* Laser drivers Advantages
* VDSS VGS(th)

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IXFB80N50Q2 Power MOSFET IXYS Corporation

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