IXFB80N50Q2 Datasheet - IXYS Corporation

IXFB80N50Q2 - Power MOSFET

www.DataSheet4U.com Advance Technical Information HiPerFET TM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFB 80N50Q2 = V DSS ID25 = RDS(on)= ≤ trr 500 V 80 A 55 mΩ 250 ns PLUS 264TM (IXFB) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited.

IXFB80N50Q2 Features

* Double metal process for low gate resistance

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic rectifier

* Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specifi

IXFB80N50Q2_IXYSCorporation.pdf