* Double metal process for low gate resistance
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic rectifier
* Applications
* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specifi
IXFB80N50Q2 Datasheet (196.02 KB)
IXFB80N50Q2
IXYS Corporation
196.02 KB
Power mosfet.
www.DataSheet4U.com Advance Technical Information HiPerFET TM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsi.
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