IXFH23N60Q - HiPerFET Power MOSFETs Q-Class

IXYS Corporation

Datasheet Details

Part number	IXFH23N60Q
Manufacturer	IXYS Corporation
File Size	590.00 KB
Description	HiPerFET Power MOSFETs Q-Class
Datasheet	IXFH23N60Q_IXYSCorporation.pdf

z 1.13/10 Nm/lb. in. Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 600 2.0 4.5 ±100 25 1 0.32 V V nA µA mA Ω IXYS advanced low gate charge process z International standard packages z Low gate charge and capacitance - easier to drive - faster switching z Low RDS (on) z Unclamped Inductive Switching (UIS.

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Published: May 30, 2011 |