* z 1.13/10 Nm/lb.in. Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 600 2.0 4.5 ±100 25 1 0.32 V V nA µA
IXFH23N60Q Datasheet (590.00 KB)
IXFH23N60Q
IXYS Corporation
590.00 KB
Hiperfet power mosfets q-class.
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet IXFH.
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