IXFH23N80Q Datasheet - IXYS Corporation

IXFH23N80Q HiPerFET Power MOSFETs Q-Class

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Mounting Force TO-247 TO-268 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 .

IXFH23N80Q Features

* z z z 1.13/10 Nm/lb.in. z 20120/4.527 N/lb 6 4 g g z z IXYS advanced low Qg process International standard packages Epoxy meets UL 94 V-0 flammability classification Low RDS (on) low Qg Avalanche energy and current rated Fast intrinsic rectifier Advantages z z Symbol Test Conditions Characte

IXFH23N80Q_IXYSCorporation.pdf