IXFH23N80Q Datasheet - IXYS Corporation

IXFH23N80Q, HiPerFET Power MOSFETs Q-Class

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt P.

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IXFH23N80Q_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFH23N80Q

Manufacturer:

IXYS Corporation

File Size:

598.85 KB

Description:

HiPerFET Power MOSFETs Q-Class

Features

* z z z 1.13/10 Nm/lb. in. z 20120/4.527 N/lb 6 4 g g z z IXYS advanced low Qg process International standard packages Epoxy meets UL 94 V-0 flammability classification Low RDS (on) low Qg Avalanche energy and current rated Fast intrinsic rectifier Advantages z z Symbol Test Conditions Characte

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IXFH23N80Q HiPerFET Power MOSFETs Q-Class IXYS Corporation

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