* International standard packages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic Rectifier Applications
IXFH7N80 Datasheet (137.05 KB)
IXFH7N80
IXYS Corporation
137.05 KB
Power mosfet.
www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID (c.
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