* Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 200 2.5 5.0 ±100 25 250 34 V V nA µA µA mΩ Advantages z z z z z z In
IXFH74N20P Datasheet (717.78 KB)
IXFH74N20P
IXYS Corporation
717.78 KB
Polarht hiperfet power mosfet.
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PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated
Preliminary Data Sheet
IXFH 74N2.
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