* q D = Drain, TAB = Drain TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C q W °C °C °C °C g q q q 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 6 q International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gat
IXFH76N06-12 Datasheet (138.80 KB)
IXFH76N06-12
IXYS Corporation
138.80 KB
Power mosfet.
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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH 76 N06-11 IXFH 76 N06-12 IXFH .
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