IXFH7N100P Datasheet - IXYS

IXFH7N100P Power MOSFET

Polar TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA7N100P IXFP7N100P IXFH7N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 V 1000 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 7 18 7 300 10 300 -55 +150.

IXFH7N100P Features

* International Standard Packages

* Fast Intrinsic Rectifier

* Avalanche Rated

* Low R and Q DS(ON) G

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

IXFH7N100P Datasheet (343.44 KB)

IXFH7N100P Datasheet Preview — Preview of IXFH7N100P PDF

Datasheet Details

Part number:

IXFH7N100P

Manufacturer:

IXYS

File Size:

343.44 KB

Description:

Power mosfet.

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IXFH7N100P Power MOSFET IXYS

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