IXFH76N06-11 Power MOSFET

IXYS Corporation

Description

www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH 76 N06-11 IXFH 76 N06-12 IXFH .

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Datasheet Specifications

Part number: IXFH76N06-11
Manufacturer: IXYS Corporation
File Size: 138.80 KB
Datasheet: IXFH76N06-11_IXYSCorporation.pdf
Description: Power MOSFET

Features

* q D = Drain, TAB = Drain TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C q W °C °C °C °C g q q q 1.6 mm (0.062 in. ) from case for 10 s Mounting torque 300 6 q International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gat

Applications

* q q q q Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. N06 N07 60 70 2.0 V V V nA mA mA mW mW VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8
* VDSS VGS = 0 V VGS = 10 V, ID = 40 A

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IXFH76N06-11 Power MOSFET IXYS Corporation

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