Description
www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH 76 N06-11 IXFH 76 N06-12 IXFH .
Features
* q
D = Drain, TAB = Drain
TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
q
W °C °C °C °C g
q q
q
1.6 mm (0.062 in. ) from case for 10 s Mounting torque
300 6
q
International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gat
Applications
* q q q q
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. N06 N07 60 70 2.0 V V V nA mA mA mW mW
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8
* VDSS VGS = 0 V VGS = 10 V, ID = 40 A