IXFK52N60Q2 Datasheet - IXYS Corporation

IXFK52N60Q2 - Power MOSFET

www.DataSheet4U.com Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFK 52N60Q2 IXFX 52N60Q2 VDSS ID25 RDS(on) = = = 600 V 52 A 115 mΩ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-264 PLUS-247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°.

IXFK52N60Q2 Features

* z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.0 4.5 ± 200 TJ = 25°C TJ = 125°C 50 2 V V nA µA mA z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V z z Double me

IXFK52N60Q2_IXYSCorporation.pdf

IXFK52N60Q2 Datasheet Preview — Preview of IXFK52N60Q2 PDF

Datasheet Details

Part number:

IXFK52N60Q2

Manufacturer:

IXYS Corporation

File Size:

567.74 KB

Description:

Power mosfet.

IXFK52N60Q2 Distributor

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IXFK52N60Q2 Power MOSFET IXYS Corporation