IXFK50N85X - Power MOSFET
X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFT50N85XHV IXFH50N85X IXFK50N85X Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting To.
IXFK50N85X Features
* International Standard Packages
* High Voltage Package
* Low RDS(ON) and QG
* Avalanche Rated
* Low Package Inductance
Advantages
* High Power Density
* Easy to Mount
* Space Savings
Applications
* Switch-Mode and Resonant-Mode Power Supplies
* DC-DC Convert