IXFM40N30 - Power MOSFET
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM35N30 IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 V DSS 300 V 300 V 300 V I D25 35 A 40 A 40 A R DS(on) 100 mW 85 mW 88 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS V DGR VGS VGSM ID25 IDM I AR EAR dv/dt P D TJ TJM Tstg TL Md Weight Symbol V DSS VGS(th) IGSS IDSS RDS(on) TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient TC.
IXFM40N30 Features
* International standard packages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS)
rated
* Low package inductance
- easy to drive and to protect
* Fast intrinsic Rectifier
Applications