Datasheet Details
Part number:
IXFM7N80, IXFH7N80
Manufacturer:
IXYS Corporation
File Size:
137.05 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFM7N80, IXFH7N80.
Please refer to the document for exact specifications by model.
IXFM7N80, IXFH7N80, Power MOSFET
www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID (cont) = 7 A RDS(on) = 1.4 W trr = 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maxi
IXFM7N80 Features
* International standard packages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic Rectifier Applications
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