IXFM7N80, IXFH7N80 Datasheet - IXYS Corporation

IXFM7N80 Power MOSFET

www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID (cont) = 7 A RDS(on) = 1.4 W trr = 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maxi.

IXFM7N80 Features

* International standard packages

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic Rectifier Applications

IXFH7N80_IXYSCorporation.pdf

IXFM7N80 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFM7N80, IXFH7N80. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFM7N80, IXFH7N80

Manufacturer:

IXYS Corporation

File Size:

137.05 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXFM7N80, IXFH7N80.
Please refer to the document for exact specifications by model.

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TAGS

IXFM7N80 IXFH7N80 Power MOSFET IXYS Corporation

IXFM7N80 Distributor