IXFN40N110P Power MOSFET

IXYS Corporation

Description

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.

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Datasheet Specifications

Part number: IXFN40N110P
Manufacturer: IXYS Corporation
File Size: 129.35 KB
Datasheet: IXFN40N110P_IXYSCorporation.pdf
Description: Power MOSFET

Features

* International standard package
* Encapsulating epoxy meets UL 94 V-0, flammability classification
* miniBLOC with Aluminium nitride isolation
* Fast recovery diode
* Unclamped Inductive Switching (UIS) t = 1min t = 1s rated
* Low package inductan

Applications

* z z nA z 50 μA 3 mA 260 mΩ z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters © 2008 IXYS CORPORATION

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IXFN40N110P Power MOSFET IXYS Corporation

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