IXFN40N110P Datasheet - IXYS Corporation

IXFN40N110P Power MOSFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA www.DataSheet4U.net IXFN40N110P VDSS ID25 RDS(on) trr = = ≤ ≤ 1100V 34A 260mΩ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS,.

IXFN40N110P Features

* International standard package

* Encapsulating epoxy meets UL 94 V-0, flammability classification

* miniBLOC with Aluminium nitride isolation

* Fast recovery diode

* Unclamped Inductive Switching (UIS) t = 1min t = 1s rated

* Low package inductan

IXFN40N110P_IXYSCorporation.pdf