Datasheet Specifications
- Part number
- IXFN420N10T
- Manufacturer
- IXYS Corporation
- File Size
- 199.02 KB
- Datasheet
- IXFN420N10T_IXYSCorporation.pdf
- Description
- Power MOSFET
Description
Advance Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN420N10T .
Applications
* 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 300 260 2500 3000 1.5/13 1.3/11.5 30 Mounting Torque Terminal Connection Torque Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGSIXFN420N10T Distributors
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