www.DataSheet4U.com HiPerFETTM Power MOSFETs VDSS IXFN44N50U2 IXFN44N50U3 500 V IXFN48N50U2 IXFN48N50U3 500 V 3 4 ID (cont) 44 A 48 A RDS(on) trr 0.12 W 35 ns 0.10 W 35 ns 3 Buck & Boost Configurations for PFC & Motor Control Circuits 2 Preliminary data 2 4 1 1 Symbol VDSS VDGR VGS VGSM HiPerFET MOSFET Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by max.
TJM TC = 25°C Repetitive IS £ IDM, -di/dt £ 100
IXFN44N50U2 Features
* Popular Buck & Boost circuit topologies
* International standard package miniBLOC SOT-227B
* Aluminium nitride isolation - high power dissipation
* Isolation voltage 3000 V~
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Low drain-to-case capa
Datasheet Details
IXFN44N50U2, IXFN48N50U3
IXYS
176.03 KB
Hiperfet power mosfets.
This datasheet PDF includes multiple part numbers: IXFN44N50U2, IXFN48N50U3.
Please refer to the document for exact specifications by model.
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