* International standard packages
* miniBLOC, with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance
* Fast intrinsic Rectifier App
IXFN44N80 Datasheet (179.67 KB)
IXFN44N80
IXYS Corporation
179.67 KB
Power mosfet.
Power MOSFET HiPerFETTM Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFN44N80
Symbol VDSS VDGR VGSS VGSM ID25 .
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