IXFN44N80 Datasheet - IXYS Corporation

IXFN44N80 Power MOSFET

Power MOSFET HiPerFETTM Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN44N80 Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dV/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 1Ω TC = 25°C 50/60 Hz, RMS t = 1min IISOL ≤ 1mA t = 1s .

IXFN44N80 Features

* International standard packages

* miniBLOC, with Aluminium nitride isolation

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance

* Fast intrinsic Rectifier App

IXFN44N80_IXYSCorporation.pdf

IXFN44N80 Datasheet Preview — Preview of IXFN44N80 PDF

Datasheet Details

Part number:

IXFN44N80

Manufacturer:

IXYS Corporation

File Size:

179.67 KB

Description:

Power mosfet.

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