IXFN44N80 Datasheet (IXYS Corporation)

IXFN44N80, Power MOSFET

Power MOSFET HiPerFETTM Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN44N80 Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dV/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 1Ω TC = 25°C 50/60 Hz, RMS t = 1min IISOL ≤ 1mA t = 1s

IXFN44N80 Features

* International standard packages

* miniBLOC, with Aluminium nitride isolation

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance

* Fast intrinsic Rectifier App