* International standard package
* Encapsulating epoxy meets UL 94 V-0, flammability classification
* miniBLOC with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS
IXFN44N80P Datasheet (104.41 KB)
IXFN44N80P
IXYS Corporation
104.41 KB
Power mosfet.
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN 44N80P
VDSS ID25
RDS(on)
trr
= 800 V = 39 A ≤.
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