IXFN44N80P Datasheet - IXYS Corporation

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IXFN44N80P Power MOSFET

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN 44N80P VDSS ID25 RDS(on) trr = 800 V = 39 A ≤.

IXFN44N80P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFN44N80P

Manufacturer:

IXYS Corporation

File Size:

104.41 KB

Description:

Power MOSFET

Features

* International standard package
* Encapsulating epoxy meets UL 94 V-0, flammability classification
* miniBLOC with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS

Applications

* DC-DC converters
* Synchronous rectification
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* Temperature and lighting controls
* Low voltage relays Advantages Characteristic Values Min. Typ. Max. 800 3.0 5

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IXFN44N80P Power MOSFET IXYS Corporation

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