IXFN48N50U3 Datasheet (IXYS)

IXFN48N50U3, Power MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFETs VDSS IXFN44N50U2 IXFN44N50U3 500 V IXFN48N50U2 IXFN48N50U3 500 V 3 4 ID (cont) 44 A 48 A RDS(on) trr 0.12 W 35 ns 0.10 W 35 ns 3 Buck & Boost Configurations for PFC & Motor Control Circuits 2 Preliminary data 2 4 1 1 Symbol VDSS VDGR VGS VGSM HiPerFET MOSFET Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by max.

TJM TC = 25°C Repetitive IS £ IDM, -di/dt £ 100

IXFN48N50U3 Features

* Popular Buck & Boost circuit topologies

* International standard package miniBLOC SOT-227B

* Aluminium nitride isolation - high power dissipation

* Isolation voltage 3000 V~

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Low drain-to-case capa