IXFN48N50 Datasheet - IXYS Corporation

IXFN48N50 HiPerFET Power MOSFETs

TM www.DataSheet4U.com HiPerFET Power MOSFETs VDSS IXFK / IXFN 44 N50 IXFK / IXFN 48 N50 ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 500 V 44 A 0.12 Ω 500 V 48 A 0.10 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Symbol Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD.

IXFN48N50 Features

* International standard packages Molding epoxies meet UL 94 V-0 flammability classification SOT-227B miniBLOC with aluminium nitride isolation Low RDS (on) HDMOSTM process Unclamped Inductive Switching (UIS) rated Fast intrinsic rectifier l l l l l l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID

IXFN48N50 Datasheet (141.88 KB)