* International standard package
* miniBLOC, with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS)
* rated Low package inductance Fast intrinsic Rectif
IXFN48N55 Datasheet (95.44 KB)
IXFN48N55
IXYS Corporation
95.44 KB
Power mosfet.
Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS.
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