IXFN48N55 Power MOSFET

IXYS Corporation

Description

Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS.

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Datasheet Specifications

Part number: IXFN48N55
Manufacturer: IXYS Corporation
File Size: 95.44 KB
Datasheet: IXFN48N55_IXYSCorporation.pdf
Description: Power MOSFET

Features

* International standard package
* miniBLOC, with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS)
* rated Low package inductance Fast intrinsic Rectif

Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 550 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 100 2 110 V V nA mA mA mW Advantages
* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode power supplies VDSS VGH(th)

IXFN48N55 Distributors

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IXFN48N55 Power MOSFET IXYS Corporation

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