Datasheet Details
- Part number
- IXFN48N55
- Manufacturer
- IXYS Corporation
- File Size
- 95.44 KB
- Datasheet
- IXFN48N55_IXYSCorporation.pdf
- Description
- Power MOSFET
IXFN48N55 Description
Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS.
IXFN48N55 Features
* International standard package
* miniBLOC, with Aluminium nitride
isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS)
* rated Low package inductance Fast intrinsic Rectif
IXFN48N55 Applications
* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 550 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 100 2 110 V V nA mA mA mW Advantages
* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode
power supplies
VDSS VGH(th)
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