IXFN48N55 Datasheet (IXYS Corporation)

IXFN48N55, Power MOSFET

Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md Weight 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, V

IXFN48N55 Features

* International standard package

* miniBLOC, with Aluminium nitride isolation

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS)

* rated Low package inductance Fast intrinsic Rectif