IXFN40N90P Power MOSFET

IXYS Corporation

Description

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VG.

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Datasheet Specifications

Part number: IXFN40N90P
Manufacturer: IXYS Corporation
File Size: 131.95 KB
Datasheet: IXFN40N90P_IXYSCorporation.pdf
Description: Power MOSFET

Features

* z z 1.6mm (0.062 in. ) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting torque Terminal connection torque t = 1min t = 1s 300 2500 3000 1.5/13 1.3/11.5 30 z z z International standard package miniBLOC, with Aluminium nitride isolation Avalanche Rated Low package inductance Fast intrinsic diod

Applications

* Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 20A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 900 3.5 6.5 ± 200 V V nA z z z z z Switched-m

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IXFN40N90P Power MOSFET IXYS Corporation

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