IXFN40N90P Datasheet - IXYS Corporation

IXFN40N90P Power MOSFET

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md www.DataSheet4U.net IXFN40N90P VDSS ID25 RDS(on) trr = = ≤ ≤ 900V 33A 210mΩ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum.

IXFN40N90P Features

* z z 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting torque Terminal connection torque t = 1min t = 1s 300 2500 3000 1.5/13 1.3/11.5 30 z z z International standard package miniBLOC, with Aluminium nitride isolation Avalanche Rated Low package inductance Fast intrinsic diod

IXFN40N90P_IXYSCorporation.pdf