IXFN48N60P Datasheet (IXYS)

IXFN48N60P, Power MOSFET

Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet TM IXFN 48N60P VDSS ID25 RDS(on) trr = 600 V = 48 A ≤ 135 mΩ ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight VISOL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ I

IXFN48N60P Features

* International standard packages

* Encapsulating epoxy meets UL 94 V-0, flammability classification

* miniBLOC with Aluminium nitride z z Mounting torque Terminal connection torque (M4) SOT-227B 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 250