IXFN48N50Q Datasheet (IXYS Corporation)

IXFN48N50Q, Power MOSFET

HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q ID25 RDS(on) 500 V 44 A 120 mW 500 V 48 A 100 mW trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W

IXFN48N50Q Features

* IXYS advanced low Qg process

* Low gate charge and capacitances - easier to drive - faster switching

* Unclamped Inductive Switching (UIS) rated

* Low RDS (on)

* Fast intrinsic diode

* International standard package

* miniBLOC with Aluminium