IXFP5N100P Power MOSFET

IXYS Corporation

Description

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA5N100P IXFH5N1.

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Datasheet Specifications

Part number: IXFP5N100P
Manufacturer: IXYS Corporation
File Size: 174.16 KB
Datasheet: IXFP5N100P_IXYSCorporation.pdf
Description: Power MOSFET

Features

* z z z z z z z International standard packages Dynamic dv/dt Rating Avalanche Rated Low RDS(ON), rugged PolarTM process Low QG Low Drain-to-Tab capacitance Low package inductance Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS

Applications

* z z z ±100 nA 10 μA 750 μA 2.8 Ω VGS = 10V, ID = 0.5
* ID25, Note 1 z z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies Uninterrupted power supplies AC motor control High speed power switching applications DS99923(07/08) © 2008 IXYS CORPORATION, All r

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IXFP5N100P Power MOSFET IXYS Corporation

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