IXFT40N50Q, IXFH40N50Q Datasheet - IXYS Corporation

IXFT40N50Q Power MOSFET

Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 40N50Q IXFT 40N50Q VDSS = 500 V = 40 A ID25 RDS(on) = 0.14 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, R.

IXFT40N50Q Features

* z z 1.13/10 Nm/lb.in. 6 4 g g IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ± 100

IXFH40N50Q_IXYSCorporation.pdf

IXFT40N50Q Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFT40N50Q, IXFH40N50Q. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFT40N50Q, IXFH40N50Q

Manufacturer:

IXYS Corporation

File Size:

139.82 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXFT40N50Q, IXFH40N50Q.
Please refer to the document for exact specifications by model.

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IXFT40N50Q IXFH40N50Q Power MOSFET IXYS Corporation

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