IXFT4N100Q Datasheet - IXYS

IXFT4N100Q Power MOSFET

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IXFH 4.

IXFT4N100Q Features

* IXYS advanced low Qg process

* Low gate charge and capacitances - easier to drive - faster switching

* International standard packages

* Low RDS (on)

* Unclamped Inductive Switching (UIS) rated

* Molding epoxies meet UL 94 V-0 flammability classifica

IXFT4N100Q Datasheet (117.93 KB)