Polar2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH42N50P2 IXFT42N50P2 VDSS = ID25 = RDS(on) ≤ 500V 42A 145mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plast
IXFH42N50P2_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFT42N50P2, IXFH42N50P2
Manufacturer:
IXYS Corporation
File Size:
128.55 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFT42N50P2, IXFH42N50P2.
Please refer to the document for exact specifications by model.