IXFT80N10, IXFH80N10 Datasheet - IXYS Corporation

IXFT80N10 Power MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N10 IXFT 80N10 VDSS = 100 V = 80 A ID25 RDS(on) = 12.5 mΩ trr ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C Lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD.

IXFT80N10 Features

* l l l l International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 4.0 ± 100 TJ = 25°C TJ =

IXFH80N10_IXYSCorporation.pdf

IXFT80N10 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFT80N10, IXFH80N10. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFT80N10, IXFH80N10

Manufacturer:

IXYS Corporation

File Size:

219.35 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXFT80N10, IXFH80N10.
Please refer to the document for exact specifications by model.

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IXFT80N10 IXFH80N10 Power MOSFET IXYS Corporation

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