IXFT86N30T Datasheet (IXYS Corporation)

IXFT86N30T, Power MOSFET

TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH86N30T IXFT86N30T VDSS = 300V ID25 = 86A  RDS(on) 46m TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 1.6mm (0.063in) from Case for 10s Plastic Body for

IXFT86N30T Features

* International Standard Packages

* Avalanche Rated

* High Current Handling Capability

* Fast Intrinsic Rectifier

* Low RDS(on) Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* DC-DC Converters

* Battery Chargers

* Switch-Mode