IXFT80N08, IXFH80N08 Datasheet - IXYS

IXFT80N08 Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N08 IXFT 80N08 VDSS ID25 RDS(on) = 80 V = 80 A = 9 mΩ trr ≤ 200 ns Symbol VDSS VDGR VGS VGSM I D25 I L(RMS) I DM IAR EAR EAS dv/dt P D T J TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C Lead current limit T C = 25°C, pulse width limited by T JM TC = 25°C TC .

IXFT80N08 Features

* l International standard packages l Low RDS (on) l Rated for unclamped Inductive load switching (UIS) l Molding epoxies meet UL 94 V-0 flammability classification Advantages l Easy to mount l Space savings l High power density © 2001 IXYS All rights reserved Downloaded from Elcodis.com electronic c

IXFH80N08-IXYS.pdf

IXFT80N08 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFT80N08, IXFH80N08. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFT80N08, IXFH80N08

Manufacturer:

IXYS

File Size:

92.25 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXFT80N08, IXFH80N08.
Please refer to the document for exact specifications by model.

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IXFT80N08 IXFH80N08 Power MOSFET IXYS

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