HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N08 IXFT 80N08 VDSS ID25 RDS(on) = 80 V = 80 A = 9 mΩ trr ≤ 200 ns Symbol VDSS VDGR VGS VGSM I D25 I L(RMS) I DM IAR EAR EAS dv/dt P D T J TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C Lead current limit T C = 25°C, pulse width limited by T JM TC = 25°C TC
Datasheet Details
Part number:
IXFT80N08, IXFH80N08
Manufacturer:
IXYS
File Size:
92.25 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFT80N08, IXFH80N08.
Please refer to the document for exact specifications by model.