* High Voltage Package
* Low RDS(ON) and QG
* Avalanche Rated
* Low Package Inductance Advantages
* High Power Density
* Easy to Mount
* Space Savings Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4m
IXFT80N65X2HV Datasheet (192.62 KB)
IXFT80N65X2HV
IXYS
192.62 KB
Power mosfet.
X2-Class HiPerFETTM Power MOSFET IXFT80N65X2HV VDSS = ID25 = RDS(on) 650V 80A 38m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diod.
📁 Related Datasheet
IXFT80N08 Power MOSFET (IXYS)
IXFT80N085 Power MOSFET (IXYS Corporation)
IXFT80N10 Power MOSFET (IXYS Corporation)
IXFT80N10Q HiPerFET Power MOSFETs (IXYS Corporation)
IXFT80N15Q Power MOSFET (IXYS Corporation)
IXFT80N20Q Power MOSFETs Q-Class (IXYS)
IXFT86N30T Power MOSFET (IXYS Corporation)
IXFT88N30P Polar HiPerFET Power MOSFET (IXYS Corporation)
IXFT100N30X3HV N-Channel Power MOSFET (IXYS)
IXFT10N100 Power MOSFETs (IXYS)
