* W °C °C °C l l l l Mounting torque (M3) 1.13/10 Nm/lb.in. 6 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l l International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for min
IXGH17N100AU1 Datasheet (114.00 KB)
IXGH17N100AU1
IXYS Corporation
114.00 KB
Low vce(sat) igbt with diode high speed igbt with diode.
VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V
IC25 34 A 34 A
VCE(sat) 3.5 V 4.0 V
Combi.
📁 Related Datasheet
IXGH17N100A High speed IGBT (IXYS Corporation)
IXGH17N100 High speed IGBT (IXYS Corporation)
IXGH17N100U1 Low VCE(sat) IGBT with Diode High speed IGBT with Diode (IXYS Corporation)
IXGH100N30C3 High Speed PT IGBT (IXYS)
IXGH10N170 High Voltage IGBT (IXYS)
IXGH10N170A High Voltage IGBT (IXYS)
IXGH10N300 High Voltage IGBT (IXYS Corporation)
IXGH10N60 High speed IGBT (IXYS Corporation)
IXGH10N60A High speed IGBT (IXYS Corporation)
IXGH12N100 High Speed IGBT (IXYS)
