Datasheet Specifications
- Part number
- IXGH17N100AU1
- Manufacturer
- IXYS Corporation
- File Size
- 114.00 KB
- Datasheet
- IXGH17N100AU1_IXYSCorporation.pdf
- Description
- Low VCE(sat) IGBT with Diode High speed IGBT with Diode
Description
VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Combi.
Features
* W °C °C °C l l l l Mounting torque (M3) 1.13/10 Nm/lb. in. 6 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s l l International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minApplications
* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25° C TJ = 125°C 5.5 500 8 ±100 17N100U1 17N100AU1 3.5 4.0 V V µA mA nA V V l l l l BVCES VGE(th) ICES IGES VCE(sat) IC IC = 4.5 mA, VGE = 0 V = 500 µA, VCE = VGE l AC motor speed cIXGH17N100AU1 Distributors
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