IXGH17N100U1 Low VCE(sat) IGBT with Diode High speed IGBT with Diode

IXYS Corporation

Description

VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Combi.

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Datasheet Specifications

Part number: IXGH17N100U1
Manufacturer: IXYS Corporation
File Size: 114.00 KB
Datasheet: IXGH17N100U1_IXYSCorporation.pdf
Description: Low VCE(sat) IGBT with Diode High speed IGBT with Diode

Features

* W °C °C °C l l l l Mounting torque (M3) 1.13/10 Nm/lb. in. 6 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s l l International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for min

Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25° C TJ = 125°C 5.5 500 8 ±100 17N100U1 17N100AU1 3.5 4.0 V V µA mA nA V V l l l l BVCES VGE(th) ICES IGES VCE(sat) IC IC = 4.5 mA, VGE = 0 V = 500 µA, VCE = VGE l AC motor speed c

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IXGH17N100U1 Low VCEsat IGBT with Diode High speed IGBT with Diode IXYS Corporation

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