IXGH17N100U1 Datasheet (IXYS Corporation) - Low VCE(sat) IGBT with Diode High speed IGBT with Diode

IXGH17N100U1, Low VCE(sat) IGBT with Diode High speed IGBT with Diode

VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Combi Packs Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25° C to 150°C TJ = 25° C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25° C TC = 90° C TC = 25° C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µ H TC = 25° C Maximum Ratings 1000 1000 ±20 ±30 34 17 68 ICM = 34

IXGH17N100U1 Features

* W °C °C °C l l l l Mounting torque (M3) 1.13/10 Nm/lb.in. 6 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l l International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for min