* International standard packages
* Low VCE(sat) - for minimum on-state conduction losses
* High current handling capability
* MOS Gate turn-on - drive simplicity
* Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications
IXGH28N60B Datasheet (84.24 KB)
IXGH28N60B
IXYS Corporation
84.24 KB
Ultra-low v ce(sat) igbt.
Ultra-Low VCE(sat) IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol www.DataSheet4U.com V.
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