IXGH28N60B - Ultra-low V Ce(sat) Igbt
Ultra-Low VCE(sat) IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 40 28 80 ICM = 56 @ 0.8 VCES 150 -55 +150 150 -5
IXGH28N60B Features
* International standard packages
* Low VCE(sat) - for minimum on-state conduction losses
* High current handling capability
* MOS Gate turn-on - drive simplicity
* Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications
