IXGH28N60B Datasheet - IXYS Corporation

IXGH28N60B Ultra-low V Ce(sat) Igbt

Ultra-Low VCE(sat) IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 40 28 80 ICM = 56 @ 0.8 VCES 150 -55 +150 150 -5.

IXGH28N60B Features

* International standard packages

* Low VCE(sat) - for minimum on-state conduction losses

* High current handling capability

* MOS Gate turn-on - drive simplicity

* Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications

IXGH28N60B Datasheet (84.24 KB)

IXGH28N60B Datasheet Preview — Preview of IXGH28N60B PDF

Datasheet Details

Part number:

IXGH28N60B

Manufacturer:

IXYS Corporation

File Size:

84.24 KB

Description:

Ultra-low v ce(sat) igbt.

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IXGH28N60B Ultra-low Cesat Igbt IXYS Corporation

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