IXGH28N60BD1 Datasheet - IXYS Corporation

IXGH28N60BD1 Low VCE(sat) IGBT

Low VCE(sat) IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Mounting torque (M3) TO-247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268 Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, .

IXGH28N60BD1 Features

* International standard packages

* IGBT and anti-parallel FRED in one package

* Low VCE(sat) - for minimum on-state conduction losses

* MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specifie

IXGH28N60BD1_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXGH28N60BD1

Manufacturer:

IXYS Corporation

File Size:

57.31 KB

Description:

Low vce(sat) igbt.

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