* z z z Optimized for low conduction losses Square RBSOA International standard packages Advantages z z High power density Low gate drive requirement Applications Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC = 250μA, VCE =
IXGH72N60A3 Datasheet (258.88 KB)
IXGH72N60A3
IXYS Corporation
258.88 KB
Genx3 600v igbt.
www.DataSheet.co.kr GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching IXGH72N60A3 IXGT72N60A3 VCES = IC110 = VCE(sat) ≤ tfi(typ) = .
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NXP Semiconductors
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| TDA19978AHV-15,518 |
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