IXGN60N60C2D1 Datasheet - IXYS Corporation

IXGN60N60C2D1 IGBT

HiPerFASTTM IGBTs with Diode IXGN60N60C2 IXGN60N60C2D1 C2-Class High Speed IGBTs VCES = IC110 = VCE(sat) trr ≤ = 600V 60A 2.5V 35ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1 MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped Inductive Load TC = 25°C 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s Mounting Torque Termin.

IXGN60N60C2D1 Features

* z International Standard Package miniBLOC z Aluminium Nitride Isolation - High Power Dissipation z Anti-Parallel Ultra Fast Diode z Isolation Voltage 3000 V~ z LCoowndVuCcEt(isoatn) foLrosMsiensimum On-State z MOS Gate Turn-on - Drive Simplicity z Low Collector-to-Case Capacitance (< 50 pF) z Low Pa

IXGN60N60C2D1 Datasheet (145.14 KB)