* International standard package SOT-227B
* Aluminium nitride isolation - high power dissipation
* Isolation voltage 3000 V~
* Very high current, fast switching IGBT
* Low VCE(sat) for minimum on-state conduction losses
* MOS Gate turn-on drive simplic
IXGN50N60B Datasheet (125.74 KB)
IXGN50N60B
IXYS Corporation
125.74 KB
Hiperfasttm igbt.
HiPerFASTTM IGBT IXGN 50N60B VCES = 600 V IC25 = 75 A VCE(sat) = 2.5 V Preliminary data sheet E www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC.
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