IXGN50N60B Datasheet - IXYS Corporation

IXGN50N60B HiPerFASTTM IGBT

HiPerFASTTM IGBT IXGN 50N60B VCES = 600 V IC25 = 75 A VCE(sat) = 2.5 V Preliminary data sheet E www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM = 100 @ 0.8 VCES 250 -55 +150 150 -55 +150 V V V.

IXGN50N60B Features

* International standard package SOT-227B

* Aluminium nitride isolation - high power dissipation

* Isolation voltage 3000 V~

* Very high current, fast switching IGBT

* Low VCE(sat) for minimum on-state conduction losses

* MOS Gate turn-on drive simplic

IXGN50N60B_IXYSCorporation.pdf