IXGN50N60B HiPerFASTTM IGBT

IXYS Corporation

Description

HiPerFASTTM IGBT IXGN 50N60B VCES = 600 V IC25 = 75 A VCE(sat) = 2.5 V Preliminary data sheet E www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC.

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Datasheet Specifications

Part number: IXGN50N60B
Manufacturer: IXYS Corporation
File Size: 125.74 KB
Datasheet: IXGN50N60B_IXYSCorporation.pdf
Description: HiPerFASTTM IGBT

Features

* International standard package SOT-227B
* Aluminium nitride isolation - high power dissipation
* Isolation voltage 3000 V~
* Very high current, fast switching IGBT
* Low VCE(sat) for minimum on-state conduction losses
* MOS Gate turn-on drive simplic

Applications

* Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 125°C 5 20

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IXGN50N60B HiPerFASTTM IGBT IXYS Corporation

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